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| NTE266 Silicon NPN Transistor Darlington Power Amplifier Features: D Forward Current Transfer Ratio: hFE = 40,000 Min D Power Dissipation: 1.33W Free-Air @ TA = +50C D Hard Solder Mountdown Applications: D Driver, IC Driver D Regulator D Touch Switch D Audio Output D Relay Substitute D Oscillator D Servo-Amplifier D Capacitor Multiplier Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-to-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W TA = +50C With Tab . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Thermal Resistance, Junction-to-Case (Note 1), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20C/W Thermal Resistance, Junction-to-Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Operating Junction Temperature Range (Note 1), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature range (Note 1), Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from case, 10sec Max), TL . . . . . . . . . . . . . . . . . +260C Note 1. Tab temperature is measured on center of tab, 1/16" from plastic body. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Forward Current Transfer Ratio Collector Saturation Voltage Base Saturation Voltage Collector Cutoff Current Emitter Cutoff Current Input Impedance Collector Capacitance Gain Bandwidth Product Delay Time and Rise Time Storage Time Fall Time Symbol hFE hfe Test Conditions IC = 200mA, VCE = 5V IC = 20mA, VCE = 5V, f = 1kHz Min 40k - - - - - - 50 - - - - - Typ - 20k - - - - - 500 5 75 100 350 800 Max - - 1.5 2.0 0.5 20 0.1 - 10 - - - - V V A A A pF MHz ns ns ns Unit VCE(sat) IC = 500mA, IB = 0.5mA, Note 2 VBE(sat) IC = 500mA, IB = 0.5mA, Note 2 ICES ICBO IEBO hie Ccbo fT td + tr ts tf VCE = 50V, TJ = +25C VCE = 50V, TJ = +150C VEB = 13V IC = 20mA, VCE = 5V, f = 1kHz VCB = 10V, f = 1MHz VCE = 5V, IC = 20mA IC = 1A, IB1 = 1mA IC = 1A, IB1 = IB2 = 1mA IC = 1A, IB1 = IB2 = 1mA Note 2. Pulsed measurement: Pulse Width = 300s, Duty Cycle 2%. .380 (9.56) C .500 (12.7) 1.200 (30.48) Ref .180 (4.57) .132 (3.35) Dia C B .325 (9.52) E .300 (7.62) .070 (1.78) x 45 Chamf .050 (1.27) .400 (10.16) Min E B C .100 (2.54) .100 (2.54) |
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